Fabrication of ion-cosubstituted bismuth titanate thin films by chemical solution deposition method

Integrated Ferroelectrics

Volumn 52, Issue , 2003, Pages 41-54

  Uchida, Hiroshi ^a   Okada, Isao ^a   Matsuda, Hirofumi ^b   Iijima, Takashi ^b   Watanabe, Takayuki ^c   Funakubo, Hiroshi ^c  

^a SOPHIA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bismuth titanate; Chemical solution deposition; Ion cosubstitution; Leakage current density; Remanent polarization

Indexed keywords

BISMUTH COMPOUNDS; CURRENT DENSITY; LEAKAGE CURRENTS; POSITIVE IONS; SUBSTITUTION REACTIONS;

BISMUTH TITANATE; CHEMICAL SOLUTION DEPOSITION (CSD); ION COSUBSTITUTION; LEAKAGE CURRENT DENSITY; REMANENT POLARIZATION;

THIN FILMS;

EID: 30344484184     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390254105     Document Type: Article

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