Nickel silicide formation using multiple-pulsed laser annealing

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Setiawan, Y ^a   Lee, P S ^a   Pey, K L ^b   Wang, X C ^c   Lim, G C ^c   Chow, F L ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LASER PULSES; MULTILAYERS; SOLIDIFICATION; SURFACE STRUCTURE;

ATOMIC CONCENTRATION; ELEMENTAL MIXING; SOLIDIFICATION VELOCITIES; SURFACE ABSORPTION;

NICKEL COMPOUNDS;

EID: 33847097315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433707     Document Type: Article

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