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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 169, Issue 1-4, 2000, Pages 124-128

Interfacial reactions of Ni/Si0.70Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing

(4) Luo, Jian Shing a Lin, Wen Tai a Chang, C Y b Shih, P S b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Ni; Pulsed KrF laser annealing; Si1 x yGexCy; Si1 xGex

Indexed keywords

EID: 0033686923 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00028-8 Document Type: Article

Times cited : (7)

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