Impurity reduction in In0.53Ga0.47As layers grown by liquid phase epitaxy using Er-treated melts

Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1588-1590

  Dhar, S ^a   Paul, Shampa ^a   Kulkarni, V N ^b  

^a UNIVERSITY OF CALCUTTA   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000214419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126104     Document Type: Article

References (19)

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