Observation of a 0.7 eV electron trap in dilute GaAsN layers grown by liquid phase epitaxy

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 964-966

  Dhar, S ^a   Halder, N ^a   Kumar, J ^b   Arora, B M ^c  

^a UNIVERSITY OF CALCUTTA   (India)

^b ANNA UNIVERSITY   (India)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DEFECTS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRON TRAPS; FAST FOURIER TRANSFORMS; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS;

FOURIER TRANSFORM ABSORPTION; NITROGEN ACTIVATION; PHOTOCAPACITANCE; PULSED LASER MELTING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4344575991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1779346     Document Type: Article

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