Luminescence and ultrafast phenomena in InGaN multiple quantum wells

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4401-4404

  Viswanath, Annamraju Kasi ^a   Lee, J I ^a   Kim, S T ^b   Yang, G M ^b   Lee, H J ^b   Kim, Dongho ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

A. Semiconductors; B. Epitaxy; D. Recombination; E. Luminescence; Quantum wells

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; LUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; ULTRAFAST PHENOMENA;

COMPOSITIONAL FLUCTUATIONS; NON RADIATIVE RECOMBINATION; PICOSECOND TIME SCALES; SAPPHIRE SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847049916     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.110     Document Type: Article

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