Blueshift of in0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1507-1509

  Li, G ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452455     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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