Electric-field dependence of luminescence spectra of (In,Ga)N/GaN LEDs containing quantum wells

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2619-2623

  Jahn, U ^a   Dhar, S ^a   Ramsteiner, M ^a   Fujiwara, K ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC EXCITATION; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LUMINESCENCE; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTOR JUNCTIONS; ELECTROLUMINESCENCE; EXCITONS; LIGHT POLARIZATION; PHOTOLUMINESCENCE;

CARRIER DRIFT; EXCITATION DENSITY; LOCALIZED EXCITONS; OPTICAL TRANSITION ENERGY; LUMINESCENCE INTENSITY; POLARIZATION FIELDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 6344276815     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200404976     Document Type: Conference Paper

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