Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4280, Issue , 2001, Pages 45-57

  Kawakami, Y ^a   Omae, K ^a   Kaneta, A ^a   Okamoto, K ^a   Izumi, T ^a   Saijou, S ^a   Inoue, K ^a   Narukawa, Y ^a   Mukai, T ^a   Fujita, S ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Exciton localization; Gain saturation; InGaN based emitters; Pump and probe spectroscopy; Recombination dynamics; Relaxation of hot carriers; Time resolved photoluminescence

Indexed keywords

ELECTRIC FIELD EFFECTS; EXCITONS; HOT CARRIERS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS; SPONTANEOUS EMISSION;

EXCITONIC TRANSITIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17844387833     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.424742     Document Type: Conference Paper

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