Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 42-43

  Ren, C ^a   Chan, D S H ^a   Faizhal, B B ^a   Li, M F ^a,b   Yeo, Y C ^a   Trigg, A D ^b   Agarwal, A ^b   Balasubramanian, N ^b   Pan, J S ^c   Lim, P C ^c   Kwong, D L ^b,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; METALLIC FILMS; NITRIDES; RARE EARTH ELEMENTS; THERMODYNAMIC STABILITY;

LANTHANIDE CONCENTRATIONS; METAL NITRIDE GATES; NITROGEN CONTENT;

MOS DEVICES;

EID: 33745175523     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469204     Document Type: Conference Paper

References (5)

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3. D.-G. Park et al., VLSI Dig., p. 186, 2004.
4. H. Y. Yu et al., IEDM Tech. Dig., p. 99, 2003.
5. H. Y. Yu et al., VLSI Dig., p. 151, 2003.