Dramatically enhanced performance of recessed SiGe source-drain PMOS by In-Situ Etch and Regrowth Technique (InSERT)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 24-25

  Ueno, Tetsuji ^a   Rhee, Hwa Sung ^a   Lee, Seung Hwan ^a   Lee, Ho ^a   Shin, Dong Suk ^a   Jin, Yun Seung ^a   Maeda, Shigenobu ^a   Lee, Nae In ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; IONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS;

IN-SITU ETCH AND REGROWTH TECHNIQUE (INSERT); ION CURRENT GAIN; SOURCE DRAIN EXTENSION (SDE);

MOS DEVICES;

EID: 33646036751     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469197     Document Type: Conference Paper

References (4)

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3. S. Piddin et al., IEDM Tech. Dig., p. 213, 2004
4. T. Sanuki et al., IEDM Tech. Dig., p. 65, 2003