Process damages in HfO2/TiN stacks: The key role of H 0 and H2 anneals

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 191-194

  Garros, X ^a   Reimbold, G ^a   Louveau, O ^b   Holliger, P ^a   Hobbs, C ^c   Leroux, C ^a   Nguyen, L Pham ^a,b   Martin, F ^b   Boulanger, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c Freescale Semiconductors   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; METALLIZING;

HYDROGEN PLASMA; INTERFACE DEFECTS; METAL GATES; STACKS;

HAFNIUM COMPOUNDS;

EID: 33846953107     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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