Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 204-210

  Tan, Shih Wei ^a   Chen, Hon Rung ^b   Chen, Wei Tien ^a   Hsu, Meng Kai ^a   Lin, An Hung ^a   Lour, Wen Shiung ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Heterojunction phototransistor; Optical gain; Optical power; Optical receiver; Photocurrent

Indexed keywords

ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PHOTOCURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

HETEROJUNCTION PHOTOTRANSISTOR; OPTICAL GAIN; OPTICAL POWER; OPTICAL RECEIVER;

PHOTOTRANSISTORS;

EID: 13344282703     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.842537     Document Type: Article

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