Reduction of 1/f carrier noise in InGaAsP/InP heterostructures by sulphur passivation of facets

Semiconductor Science and Technology

Volumn 12, Issue 7, 1997, Pages 778-780

  Hakimi, R ^a   Amann, M C ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFERENCE SUPPRESSION; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SIGNAL NOISE MEASUREMENT; SODIUM COMPOUNDS;

INJECTION RECOMBINATION SHOT NOISE; SODIUM SULPHIDE; SURFACE RECOMBINATION;

HETEROJUNCTIONS;

EID: 0031191067     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/7/004     Document Type: Article

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