Degradation effects induced by hot carrier and high channel temperature in pseudomorphic GaAs millimeter wave power HEMT's

IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings

Volumn , Issue , 1997, Pages 165-168

  Chou, Y C ^a   Li, G P ^a   Leung, D ^a   Wang, Z Y ^a   Chen, Y C ^a   Lai, R ^a   Wu, C S ^a   Kono, R ^a   Liu, P H ^a   Scarpulla, J ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; HOT CARRIERS; INDUCED CURRENTS; MILLIMETER WAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH CHANNEL TEMPERATURE (HCT); HOT CARRIER INDUCED DEGRADATION (HCID);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031356321     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)