SCOPUS 정보 검색 플랫폼

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 423-436

Growth of GaAs epitaxial layers on porous silicon

(3) Kang, T W a Leem, J Y b Kim, T W c

a Dongguk University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; OPTICAL PROPERTIES; POROUS SILICON; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EXPANSION; THERMAL STRESS;

EPITAXIAL LAYERS; THERMAL EXPANSION COEFFICIENT;

SEMICONDUCTOR GROWTH;

EID: 0030197079 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/0026-2692(95)00066-6 Document Type: Article

Times cited : (5)

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