The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 56-59

  Petry J ^a,b   Vandervorst, W ^a,b   Conard, T ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Anneal; Band gap; Composition; High k; Mixed oxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ENERGY GAP; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); BAND GAP; HIGH-Κ; MIXED OXIDES;

ALUMINUM COMPOUNDS;

EID: 2342563089     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.027     Document Type: Conference Paper

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