Recent progress in devices and materials for CMOS technology

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn 2003-January, Issue , 2003, Pages 13-16

  Wong, H S Philip ^b   Doris, B ^a   Gusev, E ^b   Ieong, M ^a   Jones, E C ^b   Kedzierski, J ^b   Ren, Z ^a   Rim, K ^b   Shang, H ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GERMANIUM;

DEVICE PERFORMANCE; DOUBLE-GATE FETS; HIGH DIELECTRIC CONSTANT (HIGH-K); METAL GATE ELECTRODES; PERFORMANCE ENHANCEMENTS; RECENT PROGRESS; STRAINED SILICON; TECHNOLOGY OPTIONS;

CMOS INTEGRATED CIRCUITS;

EID: 84944681840     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2003.1252539     Document Type: Conference Paper

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