Optical and electrical characterization of hafnium oxide deposited by MOCVD

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 965-968

  Lu, Y ^a   Buiu, O ^a   Hall, S ^a   K Hurley, P ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; ERROR ANALYSIS; EVAPORATION; FUNCTIONS; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

BAND GAP; ELECTRICAL MEASUREMENTS; POOL-FRENKEL (PF) CONDUCTION; POST DEPOSITION ANNEALS (PDA);

THIN FILMS;

EID: 14644435802     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.015     Document Type: Conference Paper

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