-
1
-
-
84971193997
-
Electroless Cu for VLSI
-
Cho S.H., and Yosi S.-D. Electroless Cu for VLSI. MRS Bull. 18 (1993) 31
-
(1993)
MRS Bull.
, vol.18
, pp. 31
-
-
Cho, S.H.1
Yosi, S.-D.2
-
2
-
-
0343396334
-
Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications
-
Kröger R., Eizcnberg M., Cong D., et al. Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications. Microelectron. Eng. 50 (2000) 375
-
(2000)
Microelectron. Eng.
, vol.50
, pp. 375
-
-
Kröger, R.1
Eizcnberg, M.2
Cong, D.3
-
3
-
-
0033358858
-
Grain boundary diffusion of copper in tantalum nitride thin films
-
Lin J.C., and Lee C. Grain boundary diffusion of copper in tantalum nitride thin films. J. Electrochem. Soc. 146 (1999) 3466
-
(1999)
J. Electrochem. Soc.
, vol.146
, pp. 3466
-
-
Lin, J.C.1
Lee, C.2
-
4
-
-
0033097618
-
Comparison of (hexafluoroacetylacetonate) Cu (vinyltrimethylsilane) and (hexafluoroacetylacetonate) Cu (allyltrimethylsilane) for metalorganic chemical vapor deposition of copper
-
Park M.Y., Son J.H., Kang S.W., et al. Comparison of (hexafluoroacetylacetonate) Cu (vinyltrimethylsilane) and (hexafluoroacetylacetonate) Cu (allyltrimethylsilane) for metalorganic chemical vapor deposition of copper. J. Mater. Res. 14 (1999) 975
-
(1999)
J. Mater. Res.
, vol.14
, pp. 975
-
-
Park, M.Y.1
Son, J.H.2
Kang, S.W.3
-
5
-
-
0031095713
-
Blanket electroless copper deposition for ultralarge scale integration
-
Dubin V.M., Shacham-Diamand Y., and Selective B. Blanket electroless copper deposition for ultralarge scale integration. J. Electrochem. Soc. 144 (1997) 898
-
(1997)
J. Electrochem. Soc.
, vol.144
, pp. 898
-
-
Dubin, V.M.1
Shacham-Diamand, Y.2
Selective, B.3
-
6
-
-
0034274290
-
Applicability of ALE TiN films as Cu/Si diffusion barriers
-
Kim D.J., Jung Y.B., Lee M.B., et al. Applicability of ALE TiN films as Cu/Si diffusion barriers. Thin Solid Film 372 (2000) 276
-
(2000)
Thin Solid Film
, vol.372
, pp. 276
-
-
Kim, D.J.1
Jung, Y.B.2
Lee, M.B.3
-
7
-
-
0033640281
-
Copper metallization for advanced IC: requirements and technological solutions
-
Morand Y. Copper metallization for advanced IC: requirements and technological solutions. Microelectron. Eng. 50 (2000) 391
-
(2000)
Microelectron. Eng.
, vol.50
, pp. 391
-
-
Morand, Y.1
-
8
-
-
0033639735
-
New plating bath for electroless copper deposition on sputtered barrier layers
-
Lantasov Y., Palmans R., and Maex K. New plating bath for electroless copper deposition on sputtered barrier layers. Microelectron. Eng. 50 (2000) 441
-
(2000)
Microelectron. Eng.
, vol.50
, pp. 441
-
-
Lantasov, Y.1
Palmans, R.2
Maex, K.3
-
12
-
-
0033116570
-
Kinetics and mechanism of electroless copper deposition at moderate-to-high copper ion and low-to-moderate formaldehyde concentrations
-
Mishra K.G., and Paramguru R.K. Kinetics and mechanism of electroless copper deposition at moderate-to-high copper ion and low-to-moderate formaldehyde concentrations. Metall. Mater. Trans. B 30 (1999) 223
-
(1999)
Metall. Mater. Trans. B
, vol.30
, pp. 223
-
-
Mishra, K.G.1
Paramguru, R.K.2
-
13
-
-
0021529794
-
Microstructure evolution during electroless copper deposition
-
Kim J., Wen S.H., Jung D.Y., et al. Microstructure evolution during electroless copper deposition. IBM J. Res. Dev. 28 (1984) 697
-
(1984)
IBM J. Res. Dev.
, vol.28
, pp. 697
-
-
Kim, J.1
Wen, S.H.2
Jung, D.Y.3
-
14
-
-
24344486704
-
Atomic-scale observation on the nucleation and growth of displacement-activated palladium catalysts and electroless copper plating
-
Lai C.H., Sung Y.C., Lin S.J., et al. Atomic-scale observation on the nucleation and growth of displacement-activated palladium catalysts and electroless copper plating. Electrochem. Solid State Lett. 8 (2005) C114
-
(2005)
Electrochem. Solid State Lett.
, vol.8
-
-
Lai, C.H.1
Sung, Y.C.2
Lin, S.J.3
-
15
-
-
0024735644
-
Selective electroless copper for VLSI interconnection
-
Pai P.L., and Ting C.H. Selective electroless copper for VLSI interconnection. IEEE Electron Device Lett. 10 (1989) 423
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 423
-
-
Pai, P.L.1
Ting, C.H.2
-
16
-
-
0041779988
-
Electrochemical deposition of nanoscaled palladium catalysts for 65 nm copper metallization
-
Chang S.Y., Hsu C.J., Fang R.H., et al. Electrochemical deposition of nanoscaled palladium catalysts for 65 nm copper metallization. J. Electrochem. Soc. 150 (2003) C603
-
(2003)
J. Electrochem. Soc.
, vol.150
-
-
Chang, S.Y.1
Hsu, C.J.2
Fang, R.H.3
-
19
-
-
0042208252
-
The deposition characteristics of accelerated nonformaldehyde electroless copper plating
-
Li J., and Kohl P.A. The deposition characteristics of accelerated nonformaldehyde electroless copper plating. J. Electrochem. Soc. 150 (2003) C558
-
(2003)
J. Electrochem. Soc.
, vol.150
-
-
Li, J.1
Kohl, P.A.2
-
20
-
-
0141569132
-
Seedless fill-up of the damascene structure only by copper electroless plating
-
Kim J.J., Cha S.H., and Lee Y.S. Seedless fill-up of the damascene structure only by copper electroless plating. Jpn. J. Appl. Phys. 42 (2003) L953
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
-
-
Kim, J.J.1
Cha, S.H.2
Lee, Y.S.3
-
21
-
-
33646402336
-
Temperature and pH dependence of the electroless Ni-P deposition on silicon
-
Liu W.L., Hsieh S.H., Tsai T.K., et al. Temperature and pH dependence of the electroless Ni-P deposition on silicon. Thin Solid Films 510 (2006) 102
-
(2006)
Thin Solid Films
, vol.510
, pp. 102
-
-
Liu, W.L.1
Hsieh, S.H.2
Tsai, T.K.3
-
22
-
-
0030087448
-
Kinetics and mechanism of electroless deposition of copper
-
Mishra K.G., and Paramguru P.K. Kinetics and mechanism of electroless deposition of copper. J. Electrochem. Soc. 143 (1996) 510
-
(1996)
J. Electrochem. Soc.
, vol.143
, pp. 510
-
-
Mishra, K.G.1
Paramguru, P.K.2
-
23
-
-
14744301185
-
Direct copper electroless deposition on a tungsten barrier layer for ultralarge scate integration
-
Kim Y.S., Bae D.L., and Yang H.C. Direct copper electroless deposition on a tungsten barrier layer for ultralarge scate integration. J. Electrochem. Soc. 152 (2005) C89
-
(2005)
J. Electrochem. Soc.
, vol.152
-
-
Kim, Y.S.1
Bae, D.L.2
Yang, H.C.3
-
24
-
-
8644281273
-
Growth kinetics of electroless cobalt deposition by TEM
-
Liu W.L., Hsieh S.H., Tsai T.K., et al. Growth kinetics of electroless cobalt deposition by TEM. J. Electrochem. Soc. 151 (2004) C680
-
(2004)
J. Electrochem. Soc.
, vol.151
-
-
Liu, W.L.1
Hsieh, S.H.2
Tsai, T.K.3
|