Direct copper electroless deposition on a tungsten barrier Layer for ultralarge scale integration

Journal of the Electrochemical Society

Volumn 152, Issue 2, 2005, Pages

  Kim, Young Soon ^a   Bae, Dae Iok ^a   Yang, Hoichang ^a   Shin, Hyung Shik ^b   Wang, G W ^a   Senkevich, J J ^a   Lu, T M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOXYLIC ACIDS; CONCENTRATION (PROCESS); CRYSTAL MICROSTRUCTURE; OXIDATION; PH EFFECTS; REDUCTION; SURFACE ROUGHNESS; TUNGSTEN;

ADHESIVE STRENGTH; BACK-END-OF-THE-LINE (BEOL); GLYOXYLIC ACID; ULTRALARGE SCALE INTEGRATION;

ELECTROLESS PLATING;

EID: 14744301185     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1850377     Document Type: Article

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