Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 375-381

  Kroger R ^a   Eizenberg, M ^a   Cong, D ^b   Yoshida, N ^b   Chen, L Y ^b   Ramaswami, S ^b   Carl, D ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; CHEMICAL VAPOR DEPOSITION; COPPER; CRYSTAL ORIENTATION; FILM GROWTH; INTERCONNECTION NETWORKS; NUCLEATION; SECONDARY ION MASS SPECTROMETRY;

DIFFUSION BARRIERS; PHYSICAL VAPOR DEPOSITION (PVD);

METALLIC FILMS;

EID: 0343396334     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00305-6     Document Type: Article

References (8)

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