Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)-Effect of annealing at 450 °C

Applied Surface Science

Volumn 253, Issue 9, 2007, Pages 4445-4449

  Robert Goumet, C ^a   Petit, M ^a,d   Bideux, L ^a   Gruzza, B ^a   Monier, G ^a   Matolin V ^b   Skala T ^b   Tsud, N ^b   Prince, K C ^c  

^a UNIVERSITÉ BLAISE PASCAL   (France)

^b CHARLES UNIVERSITY   (Czech Republic)

^c SINCROTRONE TRIESTE   (Italy)

^d UNIVERSITÉ DE TOURS   (France)

Author keywords

EELS; III V semiconductors; LEED; Nitridation; SR XPS; Synchrotron radiation; Thin films

Indexed keywords

ANNEALING; ARGON; CRYSTALLINE MATERIALS; FERMI LEVEL; IONS; PHOTOEMISSION; SYNCHROTRON RADIATION; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM METALLIC DROPLETS; INDIUM NITRIDES; NITRIDATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33846834035     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.09.067     Document Type: Article

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