Passivation of InP(100) substrates: First stages of nitridation by thin InN surface overlayers studied by electron spectroscopies

Surface and Interface Analysis

Volumn 37, Issue 7, 2005, Pages 615-620

  Petit, M ^a   Robert Goumet, C ^a   Bideux, L ^a   Gruzza, B ^a   Matolin, V ^a,b   Arabasz, S ^c   Adamowicz, B ^c   Wawer, D ^d   Bugajski, M ^d  

^a CNRS   (France)

^b CHARLES UNIVERSITY   (Czech Republic)

^c SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

AES; Electron spectroscopy; Indium phosphide; InN; Nitridation; Photoluminescence; XPS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CONTAMINATION; ELECTRON SPECTROSCOPY; GLOW DISCHARGES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

AES; INDIUM PHOSPHIDE; INN; PASSIVATION EFFECTS;

PASSIVATION;

EID: 21644453736     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.2045     Document Type: Article

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