A study of InP(100) surface passivation by antimony deposition

Synthetic Metals

Volumn 90, Issue 3, 1997, Pages 223-227

  Gruzza, B ^a   Bideux, L ^a   Mangat, P S ^b,c   Soukiassian, P ^b,d,e  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b NORTHERN ILLINOIS UNIVERSITY   (United States)

^c MOTOROLA INC   (United States)

^d CEA SACLAY   (France)

^e UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Indium phosphide; Interfaces; Passivation; Photoemission; Spectroscopy; Surfaces

Indexed keywords

ANTIMONY; CONDENSATION; DEPOSITION; HEAT TREATMENT; INTERFACES (MATERIALS); MONOLAYERS; PASSIVATION; PHOTOEMISSION; STOICHIOMETRY; SURFACE TREATMENT; SYNCHROTRON RADIATION; THERMAL EFFECTS;

INDIUM ANTIMONIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031274822     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0379-6779(97)03973-8     Document Type: Article

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