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Volumn 6349 II, Issue , 2006, Pages

Manufacturing of the first EUV full field Scanner Mask

Author keywords

Etch; EUV; NGL; Patterning; Pilot line; Process capability; Process integration

Indexed keywords

ETCHING; INTEGRATED CIRCUIT LAYOUT; MULTILAYERS; PROJECT MANAGEMENT;

EID: 33846587516     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.686035     Document Type: Conference Paper
Times cited : (2)

References (19)
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    • F. Letzkus, J. Butschke, M. Irmscher, C. Koepernik, F. M. Kamm, J. Mathuni, J. P. Rau, G. Ruhl Dry Etch Processes for the Fabrication of EUV Masks MNE 2003, Cambridge, UK
    • F. Letzkus, J. Butschke, M. Irmscher, C. Koepernik, F. M. Kamm, J. Mathuni, J. P. Rau, G. Ruhl "Dry Etch Processes for the Fabrication of EUV Masks" MNE 2003, Cambridge, UK
  • 2
    • 21144472415 scopus 로고    scopus 로고
    • Absorber stack optimization towards EUV lithography mask blank pilot production
    • F. Sobel et al. "Absorber stack optimization towards EUV lithography mask blank pilot production". SPIE 2004 Vol. 5567. p781-789.
    • (2004) SPIE , vol.5567 , pp. 781-789
    • Sobel, F.1
  • 5
    • 21144473247 scopus 로고    scopus 로고
    • Comparative Study of Mask Architectures for EUV Lithography
    • A. Pawloski et al. "Comparative Study of Mask Architectures for EUV Lithography". SPIE 2004 Vol. 5567. P762-773.
    • (2004) SPIE , vol.5567
    • Pawloski, A.1
  • 6
    • 24644481864 scopus 로고    scopus 로고
    • Comparison of EUV Mask Architectures by Process Window Analysis
    • S. Schwarzl et al. "Comparison of EUV Mask Architectures by Process Window Analysis". SPIE 2005 Vol. 5751. p435-445.
    • (2005) SPIE , vol.5751 , pp. 435-445
    • Schwarzl, S.1
  • 7
    • 33846593993 scopus 로고    scopus 로고
    • B. La Fontaine et al. Printing EUV Phase-Shift Masks using the 0.3NA Berkeley MET.EUVL Symposium 2005 in San Diego.
    • B. La Fontaine et al. "Printing EUV Phase-Shift Masks using the 0.3NA Berkeley MET".EUVL Symposium 2005 in San Diego.
  • 9
    • 33846567200 scopus 로고    scopus 로고
    • SEMI P40-1103 Specification for mounting requirements and alignment reference locations for extreme ultraviolet lithography masks.
    • SEMI P40-1103 "Specification for mounting requirements and alignment reference locations for extreme ultraviolet lithography masks".
  • 10
    • 24644486952 scopus 로고    scopus 로고
    • Impact of EUV Mask Pattern Profile Shape on CD measured by CD-SEM
    • U. Dersch et. al. "Impact of EUV Mask Pattern Profile Shape on CD measured by CD-SEM". SPIE 2005 Vol 5752. p632-645.
    • (2005) SPIE , vol.5752 , pp. 632-645
    • Dersch, U.1    et., al.2
  • 11
    • 19844364015 scopus 로고    scopus 로고
    • Numerical and experimental study of oxide growth on EUV mask capping layers
    • E. Cotte et al. "Numerical and experimental study of oxide growth on EUV mask capping layers". SPIE 2004 Vol. 5567. p751-761.
    • (2004) SPIE , vol.5567 , pp. 751-761
    • Cotte, E.1
  • 16
    • 33748046558 scopus 로고    scopus 로고
    • The integrated EUV mask process at the Advanced Mast Technology Center (AMTC) in Dresden
    • San Diego
    • U. Dersch et al. "The integrated EUV mask process at the Advanced Mast Technology Center (AMTC) in Dresden". EUVL Symposium 2005 in San Diego.
    • (2005) EUVL Symposium
    • Dersch, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.