Absorber stack optimization towards EUV lithography mask blank pilot production

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 781-790

  Sobel, F ^a   Aschke, L ^a   Renno, M ^a   Seitz, H ^a   Becker, H ^a   Olschewski, N ^a   Reichardt, T ^a   Hess G ^a   Buttgereit, U ^a   Knapp, K ^a   Letzkus, Florian ^b   Butschke, Jörg ^b   Koepernik, Corinna ^b  

^a Schott Lithotec AG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

Author keywords

Absorber stack; EUVL; Low defect coatings; LTEM; Mask blank

Indexed keywords

COATINGS; DEPOSITION; DRY ETCHING; ION BEAMS; MASKS; MULTILAYERS; OPTIMIZATION; STATISTICAL PROCESS CONTROL; THERMAL EXPANSION; ULTRAVIOLET RADIATION;

ABSORBER STACKS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); LOW DEFECT COATINGS; MASK BLANKS;

LITHOGRAPHY;

EID: 21144472415     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568787     Document Type: Conference Paper

References (10)

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3. - P. Yan et al., EUV mask absorber defect repair with focused ion beam, Proc. SPIE 3546, 206-213, 1998
4. - P. Mangat et al., EUV mask fabrication with Cr absorber, Proc. SPIE 3997, 76-82, 2000
5. nd Int. EUVL Workshop, Oct. 2000
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7. - C. Thiel et al., Process for improved reflectivity uniformity in extreme ultraviolet lithography (EUVL) masks, Proc. SPIE 5037, 339-346, 2003
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9. - F. Sobel et al., Production of Low Thermal Expansion EUVL Mask Blanks with Low Defect Multilayer, Buffer and Absorber, Proc. SPIE 5374, 242-253, 2004
10. 2 Buffer-Etch Processes with a TaN Absorber for EUV Mask Fabrication, to be published in Proc. SPIE 5567, 2004 and oral discussion