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Volumn 5751, Issue I, 2005, Pages 90-101

Development of the ASML EUV alpha demo tool

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING TECHNIQUES; LITHOGRAPHY; MASKS; MIRRORS; POLISHING; RISK MANAGEMENT; ULTRAVIOLET RADIATION;

EID: 24644498099     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600725     Document Type: Conference Paper
Times cited : (49)

References (21)
  • 8
    • 24644492047 scopus 로고    scopus 로고
    • Extreme ultraviolet sources for lithography applications
    • Miyazaki, Japan to be published
    • rd International EUVL Symposium, Miyazaki, Japan (2004), to be published.
    • (2004) rd International EUVL Symposium
    • Banine, V.1
  • 9
    • 24644518324 scopus 로고    scopus 로고
    • Development status of high power tin gas discharge produced plasma sources for next generation EUV lithography
    • Miyazaki, Japan to be published
    • rd International EUVL Symposium, Miyazaki, Japan (2004), to be published.
    • (2004) rd International EUVL Symposium
    • Ringling, J.1
  • 10
    • 24644432270 scopus 로고    scopus 로고
    • Progress in development of a high power source for EUV lithography
    • Miyazaki, Japan to be published
    • rd International EUVL Symposium, Miyazaki, Japan (2004), to be published.
    • (2004) rd International EUVL Symposium
    • Hansson, B.A.M.1
  • 11
    • 10644267839 scopus 로고    scopus 로고
    • Plasma sources for EUV lithography exposure tools
    • V. Banine and R. Moors, "Plasma sources for EUV lithography exposure tools", J. Phys. D 37 (2004) 3207.
    • (2004) J. Phys. D , vol.37 , pp. 3207
    • Banine, V.1    Moors, R.2
  • 13
    • 0000614106 scopus 로고    scopus 로고
    • Stability of hot-wire deposited amorphous-silicon thin-film transistors
    • US Patent no. 6,750,474 B1, 2004, and US Patent no. 6,686,230 B2, 2004
    • H. Meiling and R.E.I. Schropp, "Stability of hot-wire deposited amorphous-silicon thin-film transistors", Appl. Phys. Lett. 69 (8), 1996, US Patent no. 6,750,474 B1, 2004, and US Patent no. 6,686,230 B2, 2004.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.8
    • Meiling, H.1    Schropp, R.E.I.2
  • 18
    • 24644504384 scopus 로고    scopus 로고
    • Commercial EUV mask blank readiness for 45nm Half Pitch (HP) 2009 manufacturing
    • Miyazaki, Japan, to be published
    • rd International EUVL Symposium, Miyazaki, Japan (2004), to be published.
    • (2004) rd International EUVL Symposium
    • Seidel, P.1
  • 19
    • 24644440328 scopus 로고    scopus 로고
    • Press release ISMT, December 20
    • Press release ISMT (http://www.sematech.org/corporate/news/releases/ 20041220.htm), December 20, 2004.
    • (2004)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.