Development of low damage mask making process on EUV mask with thin CrN buffer layer

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5751, Issue I, 2005, Pages 158-167

  Kureishi, Mitsuhiro ^a   Ohkubo, Ryo ^a   Hosoya, Morio ^a   Shoki, Tsutomu ^a   Sakaya, Noriyuki ^a   Kobayashi, Hideo ^a   Nozawa, Osamu ^a   Usui, Yoh Ichi ^a   Nagarekawa, Osamu ^a  

^a HOYA CORPORATION   (Japan)

Author keywords

CrN buffer layer; Dry etching; EUV lithography; EUV mask; TaBN absorber

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHROMIUM COMPOUNDS; DRY ETCHING; HIGH PRESSURE EFFECTS; MULTILAYERS; ULTRAVIOLET RADIATION;

CRN BUFFER LAYER; EUV LITHOGRAPHY; EUV MASK; TABN ABSORBER;

MASKS;

EID: 24644504716     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598613     Document Type: Conference Paper

References (8)

1. T. Shoki, M. Hosoya, T. Kinoshita, H. Kobayashi, Y. Usui, R. Ohkubo, S. Ishibashi, and O. Nagarekawa, "Process development of 6-inch EUV mask with TaBN absorber", SPIE Vol. 4754, pp. 857-864, 2002
2. J. Wasson, K. Smith, P.J.S. Mangat and S. Hector, "An Infinitely Selective Repair Buffer for EUVL Reticles", SPIE Vol. 4343, pp.402, 2001.
3. rd International Workshop on EUV Lithography, 2001
4. P. Yan, "The impact of EUVL mask buffer and absorber material properties on mask quality and performance", SPIE Vol. 4688, pp. 150-160, 2002
5. nd EUVL symposium, 2003
6. T. Abe, M. Nishiguchi, T. Amano, T. Motonaga, S. Sasaki, H. Mohri, N. Hayashi, Y. Tanaka and I. Nishiyama, " Evaluation of dry etching and defect repair of EUVL mask absorber layer", SPIE Vol. 5567, ppl435-1444, 2004
7. T. Liang, E. Frendberg, D. Bald, M. Penn and A. Stiveres, " E-beam mask repair: fundamental capability and applications", SPIE Vol. 5567, pp456-466, 2004
8. C. Thiel, K. Racette, E. Fisch, M. Lawliss, L. Kindt, C. Huang, R. Ackel and M. Levy, "Process for improved reflectivity uniformity in extreme ultraviolet lithography (EUVL) masks", SPIE Vol. 5037 pp.339-346, 2003