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Volumn 5751, Issue I, 2005, Pages 190-199

Recent results on EUV mask blank multilayers and absorbers

Author keywords

Absorber; EUVL; Mask blank; Multilayer

Indexed keywords

CLEANING; DEFECTS; DRY ETCHING; LITHOGRAPHY; MASKS; MEASUREMENTS; OPTICAL PROPERTIES; SPUTTERING; THERMAL EXPANSION; ULTRAVIOLET RADIATION;

EID: 24644495128     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600538     Document Type: Conference Paper
Times cited : (5)

References (7)
  • 1
    • 1642474031 scopus 로고    scopus 로고
    • EUV lithography transition from research to commercialization
    • - C.W. Gwyn, P.J. Silvermann, EUV Lithography Transition from Research to Commercialization, Proc. SPIE 5130-25, 2003
    • (2003) Proc. SPIE , vol.5130 , Issue.25
    • Gwyn, C.W.1    Silvermann, P.J.2
  • 2
    • 0037627730 scopus 로고    scopus 로고
    • High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition
    • - H. Becker et al., High-performance 6-inch EUV mask blanks produced under real production conditions by ion-beam sputter deposition, Proc. SPIE 4889, 389-399, 2002
    • (2002) Proc. SPIE , vol.4889 , pp. 389-399
    • Becker, H.1
  • 3
    • 0038642160 scopus 로고    scopus 로고
    • Low-defect EUVL multilayers on standard-format mask blanks
    • - J.A. Folta et al., Low-defect EUVL multilayers on standard-format mask blanks, Proc. SPIE 4889, 374-381, 2002
    • (2002) Proc. SPIE , vol.4889 , pp. 374-381
    • Folta, J.A.1
  • 4
    • 0141681672 scopus 로고    scopus 로고
    • New PTB reflectometer for the characterization of large optics for the extreme ultraviolet spectral region
    • - J. Tümmler et al., New PTB reflectometer for the characterization of large optics for the extreme ultraviolet spectral region, Proc. SPIE 4688,. 338-347, 2002
    • (2002) Proc. SPIE , vol.4688 , pp. 338-347
    • Tümmler, J.1
  • 5
    • 3843119801 scopus 로고    scopus 로고
    • High throughput EUV-reflectometer for EUV mask-blanks
    • - R. Lebert et al., High Throughput EUV-Reflectometer for EUV Mask-Blanks, Proc. SPIE 5374, 808-817, 2004
    • (2004) Proc. SPIE , vol.5374 , pp. 808-817
    • Lebert, R.1
  • 7
    • 0141724752 scopus 로고    scopus 로고
    • Process for improved reflectivity uniformity in extreme ultraviolet lithography (EUVL) masks
    • - C. Thiel et al., Process for improved reflectivity uniformity in extreme ultraviolet lithography (EUVL) masks, Proc. SPIE 5037, 339-346, 2003
    • (2003) Proc. SPIE , vol.5037 , pp. 339-346
    • Thiel, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.