EUVL mask blanks: Recent results on substrates, multilayers and the dry etch process of TaN-absorbers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 I, Issue , 2006, Pages

  Seitz, Holger ^a   Renno, Markus ^a   Leutbecher, Thomas ^a   Olschewski, Nathalie ^a   Reichardt, Torsten ^a   Walter, Ronny ^a   Popp, Helmut ^a   Heß, Günter ^a   Letzkus, Florian ^b   Butschke, J̈rg ^b   Irmscher, Mathias ^b  

^a Schott Lithotec AG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

Author keywords

Absorber; EUVL; Mask blank; Multilayer

Indexed keywords

DRY ETCHING; INTEGRATED CIRCUIT MANUFACTURE; LIGHT SOURCES; LITHOGRAPHY; MULTILAYERS; OPTICAL PROPERTIES;

ABSORBERS; ETCH SELECTIVITIES; MASK BLANK; OPTICAL RESISTANCE;

MASKS;

EID: 33745593699     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655540     Document Type: Conference Paper

References (8)

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4. J. Tümmler et al., New PTB reflectometer for the characterization of large optics for the extreme ultraviolet spectral region, Proc. SPIE 4688, 338-347, 2002
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8. F. Letzkus et al., EUVL Mask Manufacturing-Technologies and Results, Proc. SPIE 5992, 2005