Investigation of oxygen distribution in electromagnetic CZ-Si melts with a transverse magnetic field using 3D global modeling

Journal of Crystal Growth

Volumn 299, Issue 1, 2007, Pages 48-58

  Liu, Lijun ^a   Nakano, Satoshi ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Impurities; A1. Magnetic fields; A2. Magnetic field assisted Czochralski method; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CURRENTS; ELECTROMAGNETIC FIELDS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; NUMERICAL METHODS; THREE DIMENSIONAL COMPUTER GRAPHICS;

3D GLOBAL MODELING; MAGNETIC FIELD-ASSISTED CZOCHRALSKI METHOD; MELT SURFACES; OXYGEN DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 33846580617     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.247     Document Type: Article

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