3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal

Crystal Research and Technology

Volumn 40, Issue 4-5, 2005, Pages 347-351

  Liu, Lijun ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Computer simulation; Czochralski method; Global modeling; Magnetic fields; Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; HEAT TRANSFER; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

CZOCHRALSKI FURNACE; GLOBAL MODELING; ROTATIONAL SYMMETRY; SILICON CRYSTAL GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 22744450144     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410349     Document Type: Conference Paper

References (6)

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5. L. Liu and K. Kakimoto, Int. J. Heat Mass Transfer, accepted for publication, 2004.
6. F. Dupret, P. Nicodeme, Y. Ryckmans, P. Wouters, and M. J. Crochet, Int. J. Heat Mass Transfer 33, 1849 (1990).