Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field

Journal of Crystal Growth

Volumn 193, Issue 3, 1998, Pages 402-412

  Watanabe, Masahito ^a   Eguchi, Minoru ^a   Hibiya, Taketoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Cusp magnetic field; Czochralski crystal growth; Melt flow; Silicon

Indexed keywords

FLOW OF FLUIDS; HEAT TRANSFER; MAGNETIC FIELD EFFECTS; MASS TRANSFER; MOLTEN MATERIALS; OXYGEN; SILICON; X RAY RADIOGRAPHY;

CUSP MAGNETIC FIELD; MELT FLOW;

CRYSTAL GROWTH FROM MELT;

EID: 0032182818     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00529-6     Document Type: Article

References (16)

1. K. Takada, Proc. Science and Technology of Silicon Materials, 1997, Chiba, p. 15.
2. H. Hirata, K. Hoshikawa, J. Crystal Growth 96 (1989) 747.
3. H. Hirata, K. Hoshikawa, J. Crystal Growth 98 (1989) 657.
4. H. Hirata, K. Hoshikawa, J. Crystal Growth 106 (1990) 164.
5. W.E. Langrlois, J. Crystal Growth 56 (1982) 15.
6. L.D. Lucas, Mem. Sci. Rev. Metallurg. 61 (1964) 1.
7. M. Langen, T. Hibiya, M. Eguchi, J. Crystal Growth 186 (1998) 550.
8. R.W. Series, D.T.J. Hurle, J. Crystal Growth 113 (1991) 305.
9. A. Hicks, A.E. Organ, N. Riley, J. Crystal Growth 94 (1989) 213.
10. K.W. Yi, M. Watanabe, M. Eguchi, K. Kakimoto, T. Hibiya, Jpn. J. Appl. Phys. 33 (1994) L487.
11. M. Watanabe, M. Eguchi, K. Kakimoto, T. Hibiya, J. Crystal Growth 133 (1993) 23.
12. M. Watanabe, M. Eguchi, K. Kakimoto, T. Hibiya, J. Crystal Growth 128 (1993) 288.
13. K. Hoshikawa, H. Kohda, H. Hirata, Jpn. J. Appl. Phys. 23 (1982) L37.
14. M. Watanabe, M. Eguchi, K. Kakimoto, H. Ono, S. Kimura, T. Hibiya, J. Crystal Growth 151 (1995) 285.
15. K. Kakimoto, E. Eguchi, H. Ozoe, J. Crystal Growth 180 (1997) 442.
16. A. Hicks, N. Riley, J. Crystal Growth 86 (1989) 957.