SCOPUS 정보 검색 플랫폼

Volumn 82-84, Issue , 2002, Pages 41-46

Modeling of impurity transport and point defect formation during Cz Si crystal growth

(3) Kalaev, V V a Zabelin, V A a Makarov, Y N a

Author keywords

Czochralski silicon growth; Numerical simulation; Oxygen transport; Point defects

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; HEAT TRANSFER; IMPURITIES; MASS TRANSFER; MATHEMATICAL MODELS; POINT DEFECTS; THERMODYNAMIC STABILITY; TRANSPORT PROPERTIES;

DEFECT EVOLUTION; GLOBAL HEAT TRANSPORT; IMPURITY TRANSPORT; POINT DEFECT FORMATION; UNSTEADY MELT CONVECTION;

SILICON;

EID: 0036131241 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (9)

References (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.