Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 409-413

  Muhe A ^a   Backofen, R ^a   Fainberg, J ^a   Muller G ^a   Dornberger, E ^b   Tomzig, E ^b   Von Ammon, W ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Czochralski; Oxygen measurement; Silicon; Transport modelling

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; ELECTROCHEMICAL SENSORS; MATHEMATICAL MODELS; OXYGEN SENSORS; SEMICONDUCTOR GROWTH;

TRANSPORT MODELS;

SEMICONDUCTING SILICON;

EID: 0033514704     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01080-X     Document Type: Article

References (15)

1. R. Falster, W. Bergholz, J. Electrochem. Soc. 137 (1990) 1548.
2. W. Zulehner, in: H.R. Huff, K.G. Barraclough, J. Chikawa (Eds.), Semiconductor Silicon 1990, Electrochemical Society, Pennington, NJ, 1990, p. 30.
3. N. Riley, J. Crystal Growth 97 (1989) 76.
4. H. Hirata, K. Hoshikawa, J. Crystal Growth 125 (1992) 181.
5. T.A. Kinney, R.A. Brown, J. Crystal Growth 126 (1993) 413.
6. I. Kanda, T. Suzuki, K. Kojima, J. Crystal Growth 166 (1996) 669.
7. S. Togawa, A. Yokotani, S. Kimura, Y. Shiraishi, M. Imai, in: H.R. Huff W. Bergholz, K. Sumino (Eds.), Semiconductor Silicon 1994, Electrochemical Society, Pennington, NJ, 1994, p. 90.
8. S. Togawa, K. Izunome, S. Kawanishi, S.-I. Chung, K. Terashima, S. Kimura, J. Crystal Growth 165 (1996) 362.
9. A. Seidl, R. Marten, G. Müller, J. Electrochem. Soc. 141 (1994) 2564.
10. A. Seidl, R. Marten, G. Müller, Mater. Sci. Eng. B 36 (1996) 46.
11. K. Kakimoto, H. Naguchi, M. Eguchi, J. Electrochem. Soc. 144 (1997) 4045.
12. H. Harada, T. Itoh, N. Ozawa, T. Abe, in: W.M. Bullis (Ed.), VLSI Science and Technology 1985, Electrochemical Society, Pennington, NJ, 1985, p. 526.
13. X.M. Huang, K. Terashima, H. Sasaki, E. Tokizaki, S. Kimura, Jpn. J. Appl. Phys. 32 (1993) 3671.
14. J. Fainberg, H.-J. Leister, G. Müller, J. Crystal Growth 180 (1997) 517.
15. S. Togawa, X.M. Huang, K. Izunome, K. Terashima, S. Kimura, J. Crystal Growth 148 (1995) 70.