In situ investigation of oxygen distribution and transport in Czochralski silicon melts by electrochemical solid ionic sensors

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 680-684

  Seidl, A ^a   Marten, R ^a   Muller G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRUCIBLES; CRYSTAL DEFECTS; HEAT TRANSFER; MASS TRANSFER; OXYGEN SENSORS; SILICON; SURFACE STRUCTURE;

MELT SURFACE; OXYGEN CONCENTRATIONS; OXYGEN MASS TRANSPORT; SILICON MELTS;

CRYSTAL GROWTH FROM MELT;

EID: 0030230316     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00130-3     Document Type: Article

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