Controlling oxygen concentration and distribution in 200 mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) method

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 III, 2002, Pages 1657-1662

  Watanabe, Masahito ^a   Eguchi, Minoru ^a   Wang, Wei ^a   Hibiya, Taketoshi ^a   Kuragaki, Shunji ^b  

^a NEC CORPORATION   (Japan)

^b Sumitomo Metal Industries Limited   (Japan)

Author keywords

A1. Magnetic fields; A1. Mass transfer; A2. Czochralski crystal growth; B2. Semiconducting silicon

Indexed keywords

INTERFACES (MATERIALS); MAGNETOELECTRIC EFFECTS; MASS TRANSFER; OXYGEN; PROCESS CONTROL; SILICON WAFERS; ULSI CIRCUITS;

HIGH QUALITY WAFERS;

CRYSTAL GROWTH FROM MELT;

EID: 0036530614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01824-3     Document Type: Article

References (9)