Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model

International Journal of Heat and Mass Transfer

Volumn 48, Issue 21-22, 2005, Pages 4481-4491

  Liu, Lijun ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Computer simulation; Czochralski method; Global modeling; Radiation; Semiconducting silicon

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL GROWTH; FURNACES; HEAT TRANSFER; MATHEMATICAL MODELS; RADIATION; THREE DIMENSIONAL;

CZOCHRALSKI METHOD; FINITE CONTROL-VOLUME METHOD; GLOBAL MODELING;

SEMICONDUCTING SILICON;

HEAT TRANSFER;

EID: 23844533280     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2005.04.031     Document Type: Article

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