Analysis of oxygen evaporation rate and dissolution rate concerning Czochralski Si crystal growth: Effect of Ar pressure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3188-3193

  Huang, Xinming ^a   Saitou, Keijirou ^a   Sakai, Susumu ^b   Terashima, Kazutaka ^c   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ar pressure; CZ Si growth; Interfacial phase; Oxygen dissolution rate; Oxygen evaporation rate; Si sessile drop; Silica crucible

Indexed keywords

EID: 0010024597     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3188     Document Type: Article

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