Organic thin-film transistors on a plastic substrate with anodically oxidized high-dielectric-constant insulators

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 299-304

  Iino, Yoshiki ^a   Inoue, Youji ^a   Fujisaki, Yoshihide ^a   Fujikake, Hideo ^a   Sato, Hiroto ^a   Kawakita, Masahiro ^a   Tokito, Shizuo ^a   Kikuchi, Hiroshi ^a  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

Anodization; Gate insulator with high dielectric constant; Organic transistors; Plastic substrate; Ta2O5; Thin film transistors

Indexed keywords

ALUMINUM; ANODIC OXIDATION; CRACKS; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PLASTICS; STRESSES; SUBSTRATES; TANTALUM; THIN FILM TRANSISTORS;

GATE INSULATORS; ORGANIC THIN FILM TRANSISTORS; PENTACENE;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0038682082     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.299     Document Type: Article

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