Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2301-2304

  Lee, Jiyoul ^a   Kim, J H ^a   Im, Seongil ^a   Jung, Duk Young ^b  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; EVAPORATION; GATES (TRANSISTOR); INDIUM; SUBSTRATES; THERMAL EFFECTS; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS;

ENERGETIC CLUSTER EVAPORATION (ECE); GATE DIELECTRICS; ORGANIC THIN FILM TRANSISTORS (OTFT); THERMAL EVAPORATION (TE);

THIN FILM TRANSISTORS;

EID: 4344677426     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767617     Document Type: Article

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