메뉴 건너뛰기




Volumn 237-239, Issue 1-4, 2002, Pages 936-941

Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth

Author keywords

A1. Computer simulation; A1. Regional density functional theory; A3. Parasitic reactions; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; ETHANE; GALLIUM NITRIDE; METHANE; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036530598     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02002-4     Document Type: Article
Times cited : (26)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.