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Volumn 237-239, Issue 1-4, 2002, Pages 936-941
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Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growth
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Author keywords
A1. Computer simulation; A1. Regional density functional theory; A3. Parasitic reactions; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials
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Indexed keywords
AMMONIA;
ETHANE;
GALLIUM NITRIDE;
METHANE;
PROBABILITY DENSITY FUNCTION;
REACTION KINETICS;
SEMICONDUCTING GALLIUM COMPOUNDS;
PARASITIC REACTIONS;
CRYSTAL GROWTH;
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EID: 0036530598
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02002-4 Document Type: Article |
Times cited : (26)
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References (28)
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