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Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

(6) Usami, Noritaka a Kutsukake, Kentaro a Nakajima, Kazuo a Amtablian, Sevak b Fave, Alain b Lemiti, Mustapha b

a TOHOKU UNIVERSITY (Japan)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SILICON; SILICON COMPOUNDS; SINGLE CRYSTALS; STRAIN CONTROL;

BURIED POROUS LAYERS; SIGE THIN FILMS; STRAIN STATUS;

THIN FILMS;

EID: 33846447041 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2433025 Document Type: Article

Times cited : (5)

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