Structural changes in porous silicon during annealing

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 93-97

  Ott, N ^a   Nerding, M ^a   Muller G ^b   Brendel, R ^b   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; SILICON WAFERS; SINTERING; SOLAR CELLS; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE SILICON; LAYER TRANSFER TECHNOLOGY;

POROUS SILICON;

EID: 0038715579     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306474     Document Type: Conference Paper

References (9)

1. R. Brendel, in: Proc. 14th European Photovoltaic Solar Energy Conf., 1354 (1997).
2. L. Cruz-Orive, J. Microsc. 131, 265 (1983).
3. D. B. Williams and C. B. Carter, Transmission Electron Microscopy, Plenum Press (New York, 1996).
4. N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, and T. Yonehara, J. Electrochem. Soc. 142, 3116 (1995).
5. J. E. Geguzin, Physik des Sinterns, VEB Deutscher Verlag für Grundstoffindustrie (Leipzig, 1973).
6. V. Labunov, V. Bondarenko, L. Glinenko, A. Dorofeev, and L. Tabulina, Thin Solid Films 137, 123 (1986).
7. D. J. Eaglesham, W. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett. 70, 1643 (1993).
8. M. Keeffe, C. Umbrach, and J. Blakely, J. Phys. Chem. Solids 55, 965 (1994).
9. M. Krüger, M. Berger, M. Marso, W. Reetz, T. Eikhoff, R. Loo, L. Vescan, M. Thönissen, H. Lüth, R. Arens-Fischer, S. Hilbrich, and W. Theiss, Jpn. J. Appl. Phys. 2, 36, L24 (1997).