Growth and characterization of thick GaAsN epilayers and GaInNAs/GaAs multiquantum wells

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 279-283

  Gilet, P ^a   Chenevas Paule, A ^a   Duvaut, P ^a   Grenouillet, L ^b   Holliger, P ^a   Million, A ^a   Rolland, G ^a   Vannuffel, C ^a  

^a CEA LETI   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MULTIQUANTUM WELLS (MQW); ROOM TEMPERATURE PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033221871     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<279::AID-PSSA279>3.0.CO;2-Z     Document Type: Article

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