AlGaN/GaN hetero Field-Effect transistor for a large current operation

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1527-1530

  Yoshida, Seikoh ^a   Ishii, Hirotatsu ^a   Li, Jiang ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

AIGaN; Breakdown; GaN; HFET; Mobility; On state resistance; Transconductance

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CARRIER CONCENTRATION; CARRIER MOBILITY; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRODES; GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; GOLD COMPOUNDS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PLATINUM COMPOUNDS; POWER FIELD EFFECT TRANSISTORS; REFRACTORY METAL COMPOUNDS; SAPPHIRE; SILICA; SILICON CARBIDE; SILICON OXIDES; TRANSCONDUCTANCE; ELECTRIC RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS;

AIGAN; BREAKDOWN; DRY ETCHING TECHNIQUES; HETERO FIELD EFFECT TRANSISTORS; HFET; MULTI-ELECTRODE STRUCTURE; ON-STATE RESISTANCE; SCHOTTKY ELECTRODES;

JUNCTION GATE FIELD EFFECT TRANSISTORS; FIELD EFFECT TRANSISTORS;

EID: 0036430527     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1527     Document Type: Conference Paper

References (13)

1. T. P. Chow and R. Tyagi: IEEE Trans. Electron Devices Vol. 41 (1994), p. 1481.
2. H. Morkoç, S. Strites, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns: J. Appl. Phys. Vol. 76 (1994), p. 1363.
3. S. C. Binari, B. L. Rowland, W. Kruppa, G. Kelner, K. Doverspike and D. K. Gaskill: Electron. Vol. 30(1994), 1248.
4. M. A. Khan, M. S. Shur, J. N. Kuzunia, Q. Chin, J. Burm and W. Schaff: Appl. Phys. Lett. Vol. 6 (1995), p. 1083.
5. O. Akutas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev and H. Morkoç, Appl. Phys. Lett. Vol. 69 (1996), p.3872.
6. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S.P. Denbaars and U. K. Mishra, IEEE Electron Device Lett. Vol. 21 (2000), p.373.
7. S. Yoshida and J. Suzuki, Jpn. J. Appl. Phys. Lett. Vol. 37 (1998), p.482.
8. S. Yoshida and J. Suzuki, J. Appl. Phys. Vol. 84 (1998), p.2940.
9. S. Yoshida and J. Suzuki: Jpn. J. Appl. Phys. Lett. Vol. 38 (1999), p.851.
10. S. Yoshida and J. Suzuki, MRS Internet J. Nitride Semicond. Res. Vol. 539 (2000), p.W4.8.
11. M. Asif Khan, J. N. Kuznia, D. T. Oloson, W. J. Schaff, J. W. Burm and M. S. Shur: Appl. Phys. Lett. Vol. 65 (1994), p.1121.
12. C. E. Witzel, IEDM Tech. Dig. (1998), p.51.
13. G. Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tara Kji, A. Kumar, J. Yang, M. Asif Khan, R. Gasaka and M. S. Shur, Appl. Phys, Lett. Vol. 22 (2001), p.53.