Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption

Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

  Lee, Youngsoo ^a   Ahn, Eungjin ^a   Kim, Jungsub ^a   Moon, Pilkyung ^a   Yang, Changjae ^a   Yoon, Euijoon ^a   Lim, Hyunjin ^b   Cheong, Hyeonsik ^b  

^a Seoul National University   (South Korea)

^b Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

GROWTH SURFACE; ISLAND FORMATION; NARROW LINEWIDTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33846431223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432285     Document Type: Article

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