1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 128-133

  Huang, Kun Fu ^a   Hsieh, Tung Po ^b   Yeh, Nien Tze ^c   Ho, Wen Jeng ^c   Chyi, Jen Inn ^b   Wu, Meng Chyi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

A1. Photoluminescence; A3. Metalorganic chemical vapor deposition; A3. Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

DIFFUSION LENGTH; IRREGULAR ISLANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1342327992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.066     Document Type: Article

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