Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Applied Surface Science

Volumn 252, Issue 15, 2006, Pages 5525-5529

  Höglund, Linda ^a   Petrini, E ^a   Asplund, C ^a   Malm, H ^a   Andersson, J Y ^a   Holtz, P O ^b  

^a ACREO AB   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Epitaxy; Growth; InAs GaAs; MOVPE; Quantum dot; TBA

Indexed keywords

LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; VAPOR PHASE EPITAXY;

GROWTH; INAS/GAAS; QUANTUM DOT; TBA;

INDIUM COMPOUNDS;

EID: 33744522118     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.128     Document Type: Article

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